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Search for "dopant activation" in Full Text gives 5 result(s) in Beilstein Journal of Nanotechnology.
A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers
Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184
- Grenoble, France 10.3762/bjnano.9.184 Abstract In this paper, we present an enhanced differential Hall effect measurement method (DHE) for ultrathin Si and SiGe layers for the investigation of dopant activation in the surface region with sub-nanometre resolution. In the case of SiGe, which constitutes the
- thick SiGe test structure fabricated by CVD and uniformly doped in situ during growth. The developed method is finally applied to the investigation of dopant activation achieved by advanced annealing methods (including millisecond and nanosecond laser annealing) in two material systems: 6 nm thick
- SiGeOI and 11 nm thick SOI. In both cases, DHE is shown to be a uniquely sensitive characterisation technique for a detailed investigation of dopant activation in ultrashallow layers, providing sub-nanometre resolution for both dopant concentration and carrier mobility depth profiles. Keywords: carrier
Group-13 and group-15 doping of germanane
Beilstein J. Nanotechnol. 2017, 8, 1642–1648, doi:10.3762/bjnano.8.164
- begin to oxidize after 24 to 96 hours in ambient atmosphere. In both cases, the incorporation of more dopant produced lower sheet resistances in H2O-containing ambient atmosphere, while only the gallium-doped samples continue to show dopant activation under vacuum and H2O-free conditions. Results and
- role in these gallium samples in addition to dopant activation. This also makes it difficult to extract an accurate value for sheet resistance, leading to the omission of its use as a metric for these samples. Regardless of the chemical state of the dopant atom in H2O atmosphere, under vacuum there is
- magnitude over undoped GeH of our samples with the highest doping. On the contrary, As:GeH does not exhibit any dopant activation under vacuum. Figure 5e shows a representative I–V plot of a 1.1% As:GeH device under vacuum. With the application of ±5 V, a current of less than 1 pA is observed, which is
A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator
Beilstein J. Nanotechnol. 2013, 4, 330–335, doi:10.3762/bjnano.4.38
- theoretical limit of 59 mV/pH and is not inferior to VLS-grown nanowires [7][13]. It was shown that the simplified fabrication technology with Schottky barriers in contact regions allows one to avoid processes of doping and dopant activation and has no effect on the NW transport-current fluctuation density
A look underneath the SiO2/4H-SiC interface after N2O thermal treatments
Beilstein J. Nanotechnol. 2013, 4, 249–254, doi:10.3762/bjnano.4.26
- (flat and faceted). Both samples were subjected to p-type doping by Al ion implantation and to a subsequent high-temperature (1650 °C) postimplantation annealing for dopant activation. On one sample, the SiC surface was coated by a protective carbon capping layer during the annealing, resulting in a
Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor
Beilstein J. Nanotechnol. 2012, 3, 564–569, doi:10.3762/bjnano.3.65
- doped NWs appeared to be [112] oriented with a specific resistivity of ρ = 198 mΩ·cm for p-type Si-NWs and ρ = 2.7 mΩ·cm for n-doped Si-NWs, revealing excellent dopant activation. Keywords: chemical vapour deposition; field-effect transistor; oligosilanes; radiation-induced nanostructures; silicon
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